December 11, 2017
Comments Off on Implementation of high performance SRAM Cell Using Transmission Gate
Posted in: IEEE 2017, VLSI
Implementation of high performance SRAM Cell Using Transmission Gate Abstract: Static Random Access Memory (SRAM) plays a most substantial role in the microprocessor world, but as the technology is scaling down in nanometers, leakage parameters and delay are the most common problems for SRAM cell which is basically designed for very low power application. Transmission […]
December 11, 2017
Comments Off on High Speed Modified Bulk stimulated Ultra Low Voltage Domino Inverter
Posted in: IEEE 2017, VLSI
High-Speed, Modified, Bulk stimulated,Ultra-Low-Voltage, Domino Inverter Abstract: In this paper, a new Ultra low voltage (ULV) logic circuit based on the floating gate structure is presented. In this technique we utilized the bulks of the transistors to speed up the circuit. Using the proposed method, the speed of the circuit enhances by connecting the bulks […]